Implantation Damage Formation in GaN and ZnO
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چکیده
منابع مشابه
The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation
In pursuit of p-type doping, we have implanted GaN with Mg ions at 200 and 500 keV with the substrate temperature maintained at −150 cold or +300 °C hot during ion irradiation. The samples have been annealed at 1000 °C postion implantation. The radiation damage peak position and its profile , the dopant distribution, and the damage stability during annealing were all shown to be dependent upon ...
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